Innovation Project to Provide 4-Inch Aluminum Nitride Crystals for Future Markets in Power Electronics and UV Photonics

Three leading players in semiconductor research and development – the Leibniz Institute for Crystal Growth (IKZ), the PVA TePla AG, and the Siltronic AG – are combining their expertise in a pioneering project to scale up aluminum nitride (AlN) crystal growth. The project focuses on the fabrication of 4-inch AlN substrates to enable advanced applications in high-power electronics and ultraviolet photonics.

Aluminum nitride (AlN) is an ultra-wide bandgap (UWBG) semiconductor material characterized by outstanding intrinsic properties, including high critical electric field strength, superior thermal conductivity, and optical transparency in the ultraviolet spectrum. These attributes make AlN a highly promising substrate and device material for next-generation power electronic components and UV disinfection technologies, enabling compact, energy-efficient, and thermally robust device architectures.

The project's focus on scaling AlN crystal diameters from 2 to 4 inches addresses a fundamental requirement for transitioning this key material from research-scale to industrial manufacturing environments. The project is set to make a substantial contribution to advancing Europe's sovereignty in the field of semiconductor materials research. AlN-based power electronics enable major efficiency gains in electromobility, renewable energy, and industrial systems. In UV photonics, new opportunities arise in areas such as disinfection (preventing pandemics and water treatment), production technology (material processing), agriculture (yield enhancement), as well as sensors and medical applications.

Diskutieren Sie über die enthaltenen Werte

Siltronic (WKN WAF300)! Wer hat das noch im Blick?

SILTRONIC AG +2,70 % Aktie

4 Aufrufe heute

NormanBates1 gestern 12:37